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KM29W32000AIT |
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| Part Number | KM29W32000AIT |
| Manufacturer | Samsung Semiconductor |
| Description | The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program op... |
| Features |
• Voltage Supply : 2.7V ~ 5.5V • Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit • Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register • 528-Byte Page Read Operation - Random Access : 10µs(Max.) - Serial Page Access : 50ns(Min.) • Fast Write Cycle Time - Program time : 250µs(typ.) - Block Erase time : 2ms(typ.) • Command/Address/Data Multiplexed I/O port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 1M Progr... |
| Document |
 KM29W32000AIT Data Sheet
PDF 382.42KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM29W32000AT |
Samsung Semiconductor |
4M x 8-Bit NAND Flash Memory |
|
| 2 | KM29W32000TS |
Samsung Semiconductor |
4M x 8-Bit NAND Flash Memory |
|
| 3 | KM29W040AT |
Samsung semiconductor |
512K x 8 bit NAND Flash Memory |
|
| 4 | KM29W16000ATS |
Samsung Electronics |
2M x 8-Bit NAND Flash Memory |
|
| 5 | KM29N040IT |
Samsung Electronics |
Flash Memory |
|
| 6 | KM29N040T |
Samsung Electronics |
Flash Memory |
|
Desde 2024. D4U Semiconductor.
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