Busque con el número de pieza junto con el fabricante o la descripción
TLN231 |
Click to view a larger image
| Part Number | TLN231 |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TLN231 TOSHIBA Infrared LED GaAℓAs Infrared Emitter TLN231 Infrared LED for Space-Optical-Transmission · · · · · High radiant intensity: 60 mW/sr (typ.) at IF = 50 mA Half-angle value: θ1/2 = ±16° (t... |
| Features |
gle value Symbol VF IR IE PO fc lP
1 q 2
Test Condition IF = 100 mA VR = 4 V IF = 50 mA IF = 50 mA IF = 50 mA + 5 mAP-P IF = 50 mA IF = 50 mA (Note 3)
Min ¾ ¾ 35 ¾ ¾ ¾ ¾
Typ. 1.6 ¾ 60 30 15 870 ±16
Max 2.0 60 ¾ ¾ ¾ ¾ ¾
Unit V mA mW/sr mW MHz nm °
Note 3: Frequency when modulation light power decreases by 3dB from 1 MHz.
Handling Precautions
· · · Soldering must be performed under the stopper. When forming the leads, bend each lead under the 5 mm of package body. Soldering must be performed after the leads have been formed. The radiant intensity decrease over time due to current flowing ... |
| Document |
 TLN231 Data Sheet
PDF 132.00KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TLN233 |
Toshiba |
TOSHIBA Infrared LED GaALAs Infrared Emitter |
|
| 2 | TLN201 |
Toshiba Semiconductor |
INFRARED LED GAA AS INFRARED ENITTER |
|
| 3 | TLN203 |
Toshiba Semiconductor |
INFRARED LED FOR PHOTOSENSORS |
|
| 4 | TLN210 |
Toshiba Semiconductor |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS |
|
| 5 | TLN210F |
Toshiba Semiconductor |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS |
|
| 6 | TLN212 |
Toshiba Semiconductor |
INFRARED LIGHT-EMISSION DIODE FOR STILL CAMERA LIGHT SOURCE FOR AUTO FOCUS |
|
Desde 2024. D4U Semiconductor.
|