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MTP12N10E |
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| Part Number | MTP12N10E |
| Manufacturer | Motorola |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTP12N10E/D ™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N–Channel Enhanceme... |
| Features |
Discrete Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits • IDSS and VDS(on) Specified at Elevated Temperature TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM ® D G S CASE 221A –06, Style 5 TO –220AB MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Rating Drain –Source Voltage Drain –Gate Voltage (RGS = 1.0 MΩ) Gate –Source Voltage — Continuous Gate –Source Voltage — Single Pulse (tp ≤ 50 µs) Drain Current — Continuous Drain Current — Single Pulse (tp ≤ 10 µs) Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VD... |
| Document |
 MTP12N10E Data Sheet
PDF 239.73KB |
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