Busque con el número de pieza junto con el fabricante o la descripción
P4NB100 |
Click to view a larger image
| Part Number | P4NB100 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
DM ( • ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction T emperature TO-220 TO-220FP INTERNAL SCHEMATIC DIAGRAM Value STP4NB100 ST P4NB100F P 1000 1000 ± 30 3.8 2.4 15.2 125 1 4 -65 to 150 150 ( 1) ISD ≤ 3.8A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS... |
| Document |
 P4NB100 Data Sheet
PDF 137.81KB |
Desde 2024. D4U Semiconductor.
|