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KM416S1020C |
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| Part Number | KM416S1020C |
| Manufacturer | Samsung Semiconductor |
| Description | The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allo... |
| Features |
• • • • 3.3V power supply LVTTL compatible with multiplexed address Dual banks operation MRS cycle with address key programs -. CAS Latency ( 2 & 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst Read Single-bit Write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The KM416S1020C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits, fabricated with SAMSUNG′s high performance CM... |
| Document |
 KM416S1020C Data Sheet
PDF 764.54KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | KM416S1020BT-G10T |
ETC |
CMOS 16M-Bit SDRAM |
|
| 2 | KM416S1021C |
Samsung Semiconductor |
512K x 16-Bit x 2-Bank SDRAM |
|
| 3 | KM416S1120AT |
Samsung Electronics |
521K x 16-Bit x 2 Bank SDRAM |
|
| 4 | KM416S1120D |
ETC |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL |
|
| 5 | KM416S4020A |
Samsung Electronics |
CMOS SDRAM |
|
| 6 | KM416S4020B |
Samsung Electronics |
CMOS SDRAM |
|
Desde 2024. D4U Semiconductor.
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