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2SB1110 |
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| Part Number | 2SB1110 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SB1109, 2SB1110 Silicon PNP Epitaxial Application Low frequency high voltage amplifier complementary pair with 2SD1609 and 2SD1610 Outline TO-126 MOD 123 Absolute Maximum Ratings (Ta = 25°C) Item ... |
| Features |
current tarnsfer ratio
h *1 FE1
— — –10 — — — µA VCB = –140 V, IE = 0 — — — — — –10 µA VCE = –160 V, IE = 0 60 — 320 60 — 320 VCE = –5 V, IC = –10 mA hFE2 Base to emitter voltage VBE Collector to emitter saturation voltage VCE(sat) 30 — — 30 — — — — –1.5 — — –1.5 V — — –2 — — –2 V VCE = –5 V, IC = –1 mA IC = –5 V, IC = –10 mA IC = –30 mA, IB = –3 mA Gain bandwidth product fT — 140 — — 140 — MHz VCE = –5 V, IC = –10 mA Collector output capacitance Cob — 5.5 — — 5.5 — pF VCB = –10 V, IE = 0, f = 1 MHz Note: 1. The 2SB1109 and 2SB1110 are grouped by hFE1 as follows. B 60 to 120 ... |
| Document |
 2SB1110 Data Sheet
PDF 25.11KB |
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