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STP4NC60A |
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| Part Number | STP4NC60A |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge ... |
| Features |
n-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature 4.2 2.6 16.8 100 0.8 3.5 –60 to 150 (*)Limited only by maximum Temperature allowed Value STP(B)4NC60A(-1) 600 600 ±30 4.2(*) 2.6(*) 16.8(*) 35 0.28 3.5 2500 STP4NC60AFP Unit V V V A A A W W/°C V/ns V °C ( •)Pulse width limited by safe operating... |
| Document |
 STP4NC60A Data Sheet
PDF 330.91KB |
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Desde 2024. D4U Semiconductor.
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