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STP5NB90 |
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| Part Number | STP5NB90 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP5NB90 STP5NB90F P 900 900 ± 30 5 3.1 20 125 1.0 4.5 -65 to 150 150
( 1) ISD ≤5 Α, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V 5(*) 3.1(*) 2... |
| Document |
 STP5NB90 Data Sheet
PDF 44.90KB |
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Desde 2024. D4U Semiconductor.
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