STB13005-1 |
Part Number | STB13005-1 |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge terminati... |
Features |
■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. 123 I2PAK Figure 1. Internal schematic diagram Table ... |
Document |
STB13005-1 Data Sheet
PDF 188.01KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | STB13005 |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS | |
2 | STB13007DT4 |
ST Microelectronics |
High voltage fast-switching NPN power transistor | |
3 | STB130N6F7 |
STMicroelectronics |
N-channel Power MOSFET | |
4 | STB130N6F7-2 |
INCHANGE |
N-Channel MOSFET | |
5 | STB130NH02L |
ST Microelectronics |
N-channel Power MOSFET | |
6 | STB130NS04ZB |
ST Microelectronics |
N-channel Power MOSFET |