IRFP044N |
Part Number | IRFP044N |
Manufacturer | Power MOSFET |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
urrent, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
Max.
53 37 180 120 0.77 ± 20 230 28 12 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surf... |
Document |
IRFP044N Data Sheet
PDF 105.26KB |
Similar Datasheet
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1 | IRFP044 |
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2 | IRFP044 |
Vishay |
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3 | IRFP044N |
INCHANGE |
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4 | IRFP044NPbF |
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5 | IRFP044PbF |
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