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IRFP048N |
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| Part Number | IRFP048N |
| Manufacturer | Power MOSFET |
| Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
| Features |
rrent, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
64 45 210 140 0.90 ± 20 270 32 14 5.0 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W W/°C V mJ A mJ V/ns °C Thermal Resistance Parameter RθJC RθCS RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surfa... |
| Document |
 IRFP048N Data Sheet
PDF 117.24KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP048 |
Power MOSFET |
Power MOSFET |
|
| 2 | IRFP048 |
Vishay |
Power MOSFET |
|
| 3 | IRFP048 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFP048N |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRFP048NPbF |
International Rectifier |
Power MOSFET |
|
| 6 | IRFP048PbF |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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