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STW20NM50 |
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| Part Number | STW20NM50 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | le The MDmesh™ is a new revolutionary MOSFET o technology that associates the Multiple Drain pros cess with the Company’s PowerMESH™ horizontal b layout. The resulting product has an outstanding low O... |
| Features |
TO-247
INTERNAL SCHEMATIC DIAGRAM
Obsolete ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VGS
Gate- source Voltage
±30
V
ID
Drain Current (continuous) at TC = 25°C
20
A
ID
Drain Current (continuous) at TC = 100°C
12.6
A
IDM ( ) Drain Current (pulsed)
80
A
PTOT
Total Dissipation at TC = 25°C
214
W
Derating Factor
1.44
W/°C
dv/dt (1) Peak Diode Recovery voltage slope
Tstg
Storage Temperature
Tj
Max. Operating Junction Temperature
( •)Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤400A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. February 2004 15 –65 t... |
| Document |
 STW20NM50 Data Sheet
PDF 178.22KB |
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