K4H561638F-UCC4 Samsung semiconductor SDRAM, Hoja de datos, Ficha técnica, Distribuidor, Inventario y Mejor Precio

K4H561638F-UCC4

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Part Number	K4H561638F-UCC4
Manufacturer	Samsung semiconductor
Description	DDR SDRAM 16Mb x 16 32Mb x 8 VDD DQ0 VDDQ DQ1 DQ2 VSSQ DQ3 DQ4 VDDQ DQ5 DQ6 VSSQ DQ7 NC VDDQ LDQS NC VDD NC LDM WE CAS RAS CS NC BA0 BA1 AP/A10 A0 A1 A2 A3 VDD VDD DQ0 VDDQ NC DQ1 VSSQ NC DQ2 VDDQ N...
Features	• 200MHz Clock, 400Mbps data rate. • VDD= +2.6V + 0.10V, VDDQ= +2.6V + 0.10V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • DLL aligns DQ and DQS transition with CK transition • MRS cycle with address key programs -. Read latency 3 (clock) for DDR400 , 2.5 (clock) for DDR333 -. Burst length (2, 4, 8) -. Burst type (sequential & interleave) • All inputs except data & DM are sampled at the positive going edge of the system clock(CK) • Data I/O transactions on both edges of data s...
Document	K4H561638F-UCC4 Data Sheet PDF 171.36KB

No.	Parte #	Fabricante	Descripción
1	K4H561638F-UCCC	Samsung semiconductor	256Mb F-die DDR400 SDRAM
2	K4H561638F-TCC4	Samsung semiconductor	256Mb F-die DDR400 SDRAM Specification
3	K4H561638F-TCCC	Samsung semiconductor	256Mb F-die DDR400 SDRAM Specification
4	K4H561638F	Samsung semiconductor	256Mb F-die DDR SDRAM Specification
5	K4H561638A-TCA0	Samsung	128Mb DDR SDRAM
6	K4H561638A-TCA2	Samsung	128Mb DDR SDRAM