IRL2505 |
Part Number | IRL2505 |
Manufacturer | International Rectifier |
Description | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spe... |
Features |
Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθCS RθJA
Parameter Junction-to-Case Case-to-Sink, Flat, Greased Surface Juction-to-Ambient
www.irf.com
PD - 91325C
IRL2505
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 0.008Ω
ID = 104A
S
TO-220AB
Max. 104
74 360 200 1.3 ± 16 ... |
Document |
IRL2505 Data Sheet
PDF 106.69KB |
Similar Datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IRL2505 |
INCHANGE |
N-Channel MOSFET | |
2 | IRL2505L |
International Rectifier |
Power MOSFET | |
3 | IRL2505LPBF |
International Rectifier |
HEXFET Power MOSFET | |
4 | IRL2505PBF |
International Rectifier |
HEXFET Power MOSFET | |
5 | IRL2505S |
International Rectifier |
Power MOSFET | |
6 | IRL2505S |
INCHANGE |
N-Channel MOSFET |