MTD20N06V |
Part Number | MTD20N06V |
Manufacturer | Motorola |
Description | MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD20N06V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–re... |
Features |
of TMOS V • On –resistance Area Product about One –half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology • Faster Switching than E –FET Predecessors ™ Data Sheet V™ MTD20N06V TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM N –Channel Enhancement –Mode Silicon Gate TM D G S CASE 369A –13, Style 2 DPAK Surface Mount Features Common to TMOS V and TMOS E –FETS • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Static Parameters are the Same for both TMOS V and TMOS E –FET • Surface Mount Package Available in 16 mm 13 –inch/2500 Unit Tape &... |
Document |
MTD20N06V Data Sheet
PDF 257.36KB |
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