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32N50Q |
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| Part Number | 32N50Q |
| Manufacturer | IXYS Corporation |
| Description | www.DataSheet4U.com HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol VDSS VDGR VGS VGS... |
| Features |
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 30N50 32N50 100 1 0.16 0.15 V V nA mA mA W W Advantages • Easy assembly • Space savings • High power density 98608B (7/00) VDSS VGS(th) IGSS ... |
| Document |
 32N50Q Data Sheet
PDF 119.22KB |
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