STB70NF03L |
Part Number | STB70NF03L |
Manufacturer | STMicroelectronics (https://www.st.com/) |
Description | This application specific Power Mosfet is the third generation of STMicroelectronics unique “Single Feature Size ™” strip-based process. The resulting transistor shows the best trade-off between onres... |
Features |
mbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 15 70 50 280 100 0.67 4 –65 to 175 175 (1) ISD ≤70A, di/dt ≤290A/µs, VDD =24 V ; Tj ≤ TJMAX. Unit V V V A A A W W/°C V/ns °C °C (q) Pulse width limited by safe operating area March 2001 1/9 ST... |
Document |
STB70NF03L Data Sheet
PDF 437.04KB |
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