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IRFZ48NL |
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| Part Number | IRFZ48NL |
| Manufacturer | International Rectifier |
| Description | l l HEXFET® Power MOSFET D IRFZ48NS IRFZ48NL VDSS = 55V RDS(on) = 0.014Ω Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low... |
| Features |
W in a typical surface mount application. The through-hole version (IRFZ48NL) is available for lowprofile applications.
G
ID = 64A
S
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temper... |
| Document |
 IRFZ48NL Data Sheet
PDF 134.29KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFZ48N |
NXP |
N-Channel MOSFET |
|
| 2 | IRFZ48N |
International Rectifier |
Power MOSFET |
|
| 3 | IRFZ48NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 4 | IRFZ48NPBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRFZ48NS |
International Rectifier |
Power MOSFET |
|
| 6 | IRFZ48NS |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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