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IRFZ48R |
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| Part Number | IRFZ48R |
| Manufacturer | International Rectifier |
| Description | l D VDSS = 60V RDS(on) = 0.018Ω G S ID = 50*A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon... |
| Features |
ximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew
Max.
50* 50* 290 190 1.3 ± 20 100 50 19 4.5 -55 to + 175 300 (1.6mm from case ) 10 lbf •in (1.1N •m) Units A W ... |
| Document |
 IRFZ48R Data Sheet
PDF 136.92KB |
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