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SSM3J01T |
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| Part Number | SSM3J01T |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications · · · Small Package Low on Resistance : Ron = 0.4 Ω (max) (@VGS ... |
| Features |
clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area, and are also affected by the environment in which the product is used. When using this device, please take heat dissipation fully into account.
Marking
3
Equivalent Circuit
3
DE
1
2
1
2
1
2002-01-16
SSM3J01T
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain-Source... |
| Document |
 SSM3J01T Data Sheet
PDF 169.82KB |
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