SSM3J02T |
Part Number | SSM3J02T |
Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
Description | SSM3J02T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J02T Power Management Switch High Speed Switching Applications · · · · Component package suitable for high-density mounting Sma... |
Features |
e sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials.
1
2002-01-17
SSM3J02T
Electrical Characteristics (Ta = 25°C)
Characteristic Gate leakage current Drain-Source breakdown voltage Drain Cut-off current Gate threshold voltage Forward transfer admittance Drain-Source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Switching time Turn-on time Turn-off time Symbol IGSS V (BR) DSS I... |
Document |
SSM3J02T Data Sheet
PDF 147.88KB |
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