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STGB20NB32LZ |
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| Part Number | STGB20NB32LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The built i... |
| Features |
ection Gate-Emitter Voltage Collector Current (continuous) at Tc = 25°C Collector Current (continuous) at Tc = 100°C Collector Current (pulsed) Single Pulse Energy Tc = 25°C Total Dissipation at Tc = 25°C Derating Factor ESD (Human Body Model) Storage Temperature Max. Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 –65 to 175 175 Unit V V V A A A mJ W W/°C KV °C °C ( •)Pulse width limited by safe operating area December 2002 1/11 STGB20NB32LZ - STGB20NB32LZ-1 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junct... |
| Document |
 STGB20NB32LZ Data Sheet
PDF 504.15KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | STGB20NB32LZ-1 |
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IGBT |
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| 2 | STGB20NB37LZ |
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| 3 | STGB20N40LZ |
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| 4 | STGB20N45LZAG |
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| 5 | STGB20NC60V |
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very fast IGBT |
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| 6 | STGB20NC60VT4 |
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very fast IGBT |
|
Desde 2024. D4U Semiconductor.
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