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STGB20NB37LZ |
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| Part Number | STGB20NB37LZ |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on patented strip layout, STMicroelectronics has designed an advanced family of IGBTs with outstanding performances. The built in collector-gate zener ex... |
| Features |
tinuous) at Tc = 25 o C Collector Current (continuous) at Tc = 100 o C Collector Current (pulsed) Single Pulse Energy Tc = 25 o C T otal Dissipation at Tc = 25 o C Derating Factor ESD (Human Body Model) Storage Temperature Max. O perating Junction Temperature Value CLAMPED 20 CLAMPED 40 30 80 700 150 1 4 -65 to 175 175 Un it V V V A A A mJ W W /o C KV
o o
C C 1/6
( •) Pulse width limited by safe operating area February 2000 STGB20NB37LZ THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T y... |
| Document |
 STGB20NB37LZ Data Sheet
PDF 50.67KB |
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Desde 2024. D4U Semiconductor.
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