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STGB3NB60HD |
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| Part Number | STGB3NB60HD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix ”... |
| Features |
ameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature
o o
Value 600 ± 20 6 3 24 70 0.56 -65 to 150 150
Un it V V A A A W W /o C
o o
C C
( •) Pulse width limited by max. junction temperature June 1999 1/8 STGB3NB60HD THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink ... |
| Document |
 STGB3NB60HD Data Sheet
PDF 91.60KB |
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Desde 2024. D4U Semiconductor.
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