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STGB3NB60SD |
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| Part Number | STGB3NB60SD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix “... |
| Features |
ntinuos)at Tc=100°C Collector Current (pulsed) Total Dissipation at Tc = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 ± 20 6 3 25 70 0.46 –60 to 175 175 Unit V V A A A W W/°C °C °C ( •)Pulse width limited by safe operating area. November 2000 1/8 STGB3NB60SD THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 2.14 62.5 0.5 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol VBR(CES) ICES IGSS Parameter Coll... |
| Document |
 STGB3NB60SD Data Sheet
PDF 336.48KB |
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Desde 2024. D4U Semiconductor.
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