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STGD3NB60SD |
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| Part Number | STGD3NB60SD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances. The suffix "... |
| Features |
T c = 25 C Collector Current (continuous) at T c = 100 C Collector Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Storage Temperature Max. Operating Junction Temperature
o o
Value 600 ± 20 6 3 25 48 0.32 -65 to 175 175
Unit V V A A A W W/ o C
o o
C C
( •) Pulse width limited by safe operating area March 2000 1/8 STGD3NB60SD THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 3.125 100 1.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise spe... |
| Document |
 STGD3NB60SD Data Sheet
PDF 322.75KB |
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