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STGW20NB60KD |
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| Part Number | STGW20NB60KD |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstandin... |
| Features |
ES VECR VGE IC IC ICM ( ) Tsc PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Short Circuit Withstand Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 ± 20 40 20 80 10 150 1.2 – 55 to 150 Unit V V V A A A µs W W/°C °C THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.83 50 °C/W °C/W ELECTRICAL ... |
| Document |
 STGW20NB60KD Data Sheet
PDF 312.54KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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