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IXFT13N80Q |
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| Part Number | IXFT13N80Q |
| Manufacturer | IXYS Corporation |
| Description | HiPerFETTM Power MOSFETs Q Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low Qg IXFH 13N80Q IXFT 13N80Q VDSS ID25 RDS(on) = = = 800 V 13 A 0.70 W trr £ 250 ns Preliminary data she... |
| Features |
• • • • IXYS advanced low Qg process International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated • Fast switching • Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C Characteristic Values Min. Typ. Max. 800 2.5 4.5 ±100 50 1 0.70 V V nA mA mA W Advantages • Easy to mount • Space savings • High power density VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms... |
| Document |
 IXFT13N80Q Data Sheet
PDF 51.29KB |
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Desde 2024. D4U Semiconductor.
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