IXFN64N50P IXYS Corporation HiPerFET Power MOSFET Datasheet. existencias, precio

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IXFN64N50P

IXYS Corporation
IXFN64N50P
IXFN64N50P IXFN64N50P
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Part Number IXFN64N50P
Manufacturer IXYS Corporation
Description PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Preliminary Data Sheet IXFN 64N50P VDSS ID25 RDS(on) trr = 500 V = 64 A ≤ 85 mΩ ≤ 250 ns Symbol VDSS...
Features International standard packages Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z z miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Mounting torque 50/60 Hz t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque (M4) SOT-227B 1.13/10 Nm/lb.in. 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Characteristic Values Min. Typ. Max. 500 2.5 5.0 ±100 TJ = 125°C ...

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