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FJP3835 |
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| Part Number | FJP3835 |
| Manufacturer | Fairchild Semiconductor |
| Description | FJP3835 FJP3835 Power Amplifier • High Current Capability : IC=8A • High Power Dissipation • Wide S.O.A 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Rat... |
| Features |
5V, IC=1A VCB=10V, f=1MHz VCC=20V, IC=1A=10IB1=-10IB2 RL=20Ω
Min. 200 120 8
Typ.
Max.
Units V V V
0.1 0.1 120 250 0.5 1.2 30 210 0.26 0.68 6.68
mA mA V V MHz pF µs µs µs
Current Gain
Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Output Capacitance Turn On Time Fall Time Storage Time
©2003 Fairchild Semiconductor Corporation
Rev. A, December 2003
FJP3835
Typical Characteristics
7
1000
IB = 35mA
6
VCE = 4V
IC [A], COLLECTOR CURRENT
hFE, DC CURRENT GAIN
5
TC = 125 C
o
TC = 75 C
o
4
100
3
TC = - 25 C
o
TC = 25 C
o
IB = 10... |
| Document |
 FJP3835 Data Sheet
PDF 60.24KB |
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