Busque con el número de pieza junto con el fabricante o la descripción
HM5116100 |
Click to view a larger image
| Part Number | HM5116100 |
| Manufacturer | Hitachi Semiconductor |
| Description | The Hitachi HM5116100 is a CMOS dynamic RAM organized 16,777,216-word × 1-bit. It employs the most advanced 0.5µm CMOS technology for high performance and low power. The HM5116100 offers Fast Page Mod... |
| Features |
• Single 5 V ( ±10%) • Access time: 60 ns/70 ns (max) • Power dissipation Active mode: 440 mW/385 mW (max) Standby mode 11 mW (max) • Fast page mode capability • Refresh cycles 4096 refresh cycles : 64 ms • 3 variations of refresh RAS -only refresh CAS -before-RAS refresh Hidden refresh • Test function 16-bit parallel test mode Ordering Information Type No. HM5116100S-6 HM5116100S-7 Access time 60 ns 70 ns Package 300-mil 26-pin plastic SOJ (CP-26/24DB) HM5116100 Series Pin Arrangement HM5116100S Series VCC Din NC WE RAS A11 1 2 3 4 5 6 26 25 24 23 22 21 VSS Dout NC CAS NC ... |
| Document |
 HM5116100 Data Sheet
PDF 217.74KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | HM5116400 |
Hitachi |
(HM5116400 / HM5117400) 4M DRAM |
|
| 2 | HM5116405 |
Hitachi |
(HM5116405 / HM5117405) 16M EDO DRAM |
|
| 3 | HM5117400 |
Hitachi |
(HM5116400 / HM5117400) 4M DRAM |
|
| 4 | HM5117400AS7GS |
ETC |
CMOS 4M DRAM |
|
| 5 | HM5117400B |
Hitachi |
4M DRAM |
|
| 6 | HM5117405 |
Hitachi |
(HM5116405 / HM5117405) 16M EDO DRAM |
|
| 7 | HM5117800BJ |
ETC |
CMOS 2M x 8-Bit DRAM |
|
| 8 | HM5117805 |
Elpida Memory |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh |
|
| 9 | HM5118160 |
Hitachi |
16M FP DRAM |
|
| 10 | HM5118160B |
Hitachi |
1M x 16-Bit DRAM |
|
Desde 2024. D4U Semiconductor.
|