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FQU3N50C |
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| Part Number | FQU3N50C |
| Manufacturer | Fairchild Semiconductor |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min... |
| Features |
• 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode po... |
| Document |
 FQU3N50C Data Sheet
PDF 1.02MB |
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Desde 2024. D4U Semiconductor.
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