MRF448 |
Part Number | MRF448 |
Manufacturer | Motorola |
Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF448/D NPN Silicon RF Power Transistor Designed primarily for high–voltage applications as a high–power linear amplifier f... |
Features |
Case Symbol RθJC Max 0.6 Unit °C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector –Emitter Breakdown Voltage (IC = 200 mAdc, IB = 0) Collector –Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) Collector –Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter –Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO 50 100 100 4.0 — — — — — — — — Vdc Vdc Vdc Vdc (continued) NOTE: 1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions. R... |
Document |
MRF448 Data Sheet
PDF 108.45KB |
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