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IRFD120 |
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| Part Number | IRFD120 |
| Manufacturer | Fairchild Semiconductor |
| Description | IRFD120 Data Sheet January 2002 1.3A, 100V, 0.300 Ohm, N-Channel Power MOSFET This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown a... |
| Features |
• 1.3A, 100V • rDS(ON) = 0.300Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFD120 PACKAGE HEXDIP BRAND IRFD120 Symbol D NOTE: When ordering, use the entire part number. G S Packaging HEXDIP DRAIN GATE SOURCE ©2002 Fairchild Semiconductor Corporation IRFD120 Rev. B IRFD120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRFD120 100... |
| Document |
 IRFD120 Data Sheet
PDF 91.27KB |
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