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IRGPH40F |
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| Part Number | IRGPH40F |
| Manufacturer | IRF |
| Description | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi... |
| Features |
• Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency (1 to 10kHz) See Fig. 1 for Current vs. Frequency curve G E C Fast Speed IGBT VCES = 1200V VCE(sat) ≤ 3.3V @VGE = 15V, I C = 17A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum ... |
| Document |
 IRGPH40F Data Sheet
PDF 255.03KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGPH40 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRGPH40FD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRGPH40M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRGPH40MD2 |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRGPH40S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRGPH20M |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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