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IRGPH30S |
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| Part Number | IRGPH30S |
| Manufacturer | IRF |
| Description | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi... |
| Features |
• Switching-loss rating includes all "tail" losses • Optimized for line frequency operation (to 400Hz) C Standard Speed IGBT VCES = 1200V G E VCE(sat) ≤ 3.0V @VGE = 15V, IC = 13A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ ... |
| Document |
 IRGPH30S Data Sheet
PDF 82.70KB |
Similar Datasheet
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| 1 | IRGPH30MD2 |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | IRGPH20M |
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| 3 | IRGPH20S |
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| 4 | IRGPH40 |
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| 5 | IRGPH40F |
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| 6 | IRGPH40FD2 |
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Desde 2024. D4U Semiconductor.
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