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IRGP420U |
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| Part Number | IRGP420U |
| Manufacturer | IRF |
| Description | Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requi... |
| Features |
• Switching-loss rating includes all "tail" losses • Optimized for high operating frequency (over 5kHz) C UltraFast IGBT VCES = 500V G E See Fig. 1 for Current vs. Frequency curve VCE(sat) ≤ 3.0V @VGE = 15V, I C = 7.5A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. TO-247AC Absolute Maximum Ra... |
| Document |
 IRGP420U Data Sheet
PDF 258.44KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRGP4262D-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
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| 2 | IRGP4262DPBF |
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INSULATED GATE BIPOLAR TRANSISTOR |
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| 3 | IRGP4263-EPBF |
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| 4 | IRGP4263D-EPbF |
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| 5 | IRGP4263DPbF |
International Rectifier |
Insulated Gate Bipolar Transistor |
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| 6 | IRGP4263PBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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