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MRF10070 |
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| Part Number | MRF10070 |
| Manufacturer | Motorola |
| Description | MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by MRF10070/D Microwave Pulse Power Transistor Designed for 1025 –1150 MHz pulse common base amplifier applications such as TCA... |
| Features |
Range Junction Temperature Symbol VCES VCBO VEBO IC PD Tstg TJ Value 65 65 3.5 8.8 438 2.5 – 65 to + 200 200 Unit Vdc Vdc Vdc Adc Watts W/°C °C °C THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case (3) Symbol RθJC Max 0.4 Unit °C/W NOTES: 1. Under pulse RF operating conditions. 2. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as pulsed RF amplifiers. 3. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques. (Worst case θJC value measure... |
| Document |
 MRF10070 Data Sheet
PDF 97.78KB |
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