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IRFS254B |
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| Part Number | IRFS254B |
| Manufacturer | Fairchild |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o... |
| Features |
• • • • • • 16A, 250V, RDS(on) = 0.14Ω @VGS = 10 V Low gate charge ( typical 95 nC) Low Crss ( typical 60 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G D S TO-3PF IRFS Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFS254B 250 16 10.1 64 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltag... |
| Document |
 IRFS254B Data Sheet
PDF 644.89KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFS254 |
Fairchild Semiconductor |
Power MOSFET |
|
| 2 | IRFS254A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 3 | IRFS254A |
Fairchild Semiconductor |
Power MOSFET |
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| 4 | IRFS250A |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | IRFS250A |
Fairchild Semiconductor |
Power MOSFET |
|
| 6 | IRFS250B |
Fairchild |
200V N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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