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STW60NE10 |
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| Part Number | STW60NE10 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance... |
| Features |
-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt ( 1) Peak Diode Recovery voltage slope Ts tg Tj June 1999 Storage Temperature Max. Operating Junction Temperature
o o o
Value 100 100 ± 20 60 42 240 180 1.2 9 -65 to 175 175
( 1) ISD ≤60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W W /o C V/ns
o o
C C 1/8
( •) Pulse width limited by safe operating area STW60NE10 THERMAL DATA R thj -case Rthj -amb R thc-sink Tl Thermal Resistance Junction-case M... |
| Document |
 STW60NE10 Data Sheet
PDF 88.24KB |
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