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IRG4PC50F |
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| Part Number | IRG4PC50F |
| Manufacturer | IRF |
| Description | PD 91468C IRG4PC50F INSULATED GATE BIPOLAR TRANSISTOR Features • Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides... |
| Features |
• Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Fast Speed IGBT VCES = 600V G E VCE(on) typ. = 1.45V @VGE = 15V, IC = 39A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter... |
| Document |
 IRG4PC50F Data Sheet
PDF 146.42KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PC50F-EPBF |
International Rectifier |
Fast Speed IGBT |
|
| 2 | IRG4PC50FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG4PC50FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PC50FPBF |
International Rectifier |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PC50K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG4PC50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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