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IRG4PC50W |
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| Part Number | IRG4PC50W |
| Manufacturer | IRF |
| Description | PD - 91657B IRG4PC50W INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses... |
| Features |
• Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) max. = 2.30V @VGE = 15V, IC = 27A n-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) • Of particular benefit to single-ended... |
| Document |
 IRG4PC50W Data Sheet
PDF 157.33KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PC50F |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PC50F-EPBF |
International Rectifier |
Fast Speed IGBT |
|
| 3 | IRG4PC50FD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PC50FDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PC50FPBF |
International Rectifier |
Fast Speed IGBT - INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG4PC50K |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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