2SD1052A Toshiba Silicon NPN Transistor Datasheet. existencias, precio

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2SD1052A

Toshiba
2SD1052A
2SD1052A 2SD1052A
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Part Number 2SD1052A
Manufacturer Toshiba (https://www.toshiba.com/)
Description SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) 2SD1052A AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS . FEATURES : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (...
Features : . High DC Current Gain of 400 to 1200 at VCE =5V, I C =0.5A . Low VcE(sat) of 1-OV (MAX.) at Ic=lA, IB =0.02A . Collector Power Dissipation of 30V at Tc=25°C Unit in mm W MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current SYMBOL vCB0 vCE0 VEB0 ic RATING 50 50 UNIT V 0.7 6 . X < .2=5 4, 2.5 4 f «, % 2? Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range IB ?C stg 0.5 1.5 30 150 -55-150 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EIAJ TOSHIBA ...

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