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STP9NB60 |
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| Part Number | STP9NB60 |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with... |
| Features |
n-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor dv/dt( 1 ) Peak Diode Recovery voltage slope V ISO Ts tg Tj Insulation Withstand Voltage (DC) Storage Temperature Max. O perating Junction Temperature
o
TO-220
TO-220FP
INTERNAL SCHEMATIC DIAGRAM
Value STP9NB60 STP9NB60F P 600 600 ± 30 9.0 5.7 36 125 1.0 4.5 -65 to 150 150
( 1) ISD ≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V 9.0(*) ... |
| Document |
 STP9NB60 Data Sheet
PDF 108.95KB |
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