Busque con el número de pieza junto con el fabricante o la descripción
TC58NVG1S3BFT00 |
Click to view a larger image
| Part Number | TC58NVG1S3BFT00 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | e e h S a at .D w w FEATURES • Organization Memory cell array Register Page size Block size • • TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16... |
| Features |
• Organization Memory cell array Register Page size Block size • • TC58NVG1S3B 2112 × 128K × 8 2112 × 8 2112 bytes (128K + 4K) bytes TC58NVG1S8B 1056 × 128K × 16 1056 × 16 1056 words (64K + 2K) words TC58NVG1S3BFT00/TC58NVG1S8BFT00 The TC58NVG1SxB is a single 3.3 V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes/(1024 + 32) words × 64 pages × 2048 blocks. The device has a 2112-byte/1056-word static register which allow program and read data to be transferred between the register and the memory cell array in... |
| Document |
 TC58NVG1S3BFT00 Data Sheet
PDF 337.38KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | TC58NVG1S3EBAI4 |
Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
|
| 2 | TC58NVG1S3ETA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 3 | TC58NVG1S3ETAI0 |
Toshiba |
2 GBIT (256M x 8-BIT) CMOS NAND E2PROM |
|
| 4 | TC58NVG1S3HBAI4 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 5 | TC58NVG1S3HBAI6 |
Toshiba |
2G-BIT (256M x 8 BIT) CMOS NAND E2PROM |
|
| 6 | TC58NVG1S3HTA00 |
Toshiba |
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM |
|
Desde 2024. D4U Semiconductor.
|