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IRL540NS |
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| Part Number | IRL540NS |
| Manufacturer | IRF |
| Description | l D VDSS = 100V G S RDS(on) = 0.044Ω ID = 36A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. ... |
| Features |
n a typical surface mount application. The through-hole version (IRF540NL) is available for lowprofile applications.
D 2 P ak
T O -26 2
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy
Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
Operating Junction and Storage Temperature R... |
| Document |
 IRL540NS Data Sheet
PDF 182.42KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRL540N |
IRF |
HEXFET Power MOSFET |
|
| 2 | IRL540N |
INCHANGE |
TO-220C N-Channel MOSFET |
|
| 3 | IRL540N |
INCHANGE |
TO-220F N-Channel MOSFET |
|
| 4 | IRL540NL |
INCHANGE |
N-Channel MOSFET |
|
| 5 | IRL540NLPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 6 | IRL540NPBF |
International Rectifier |
Power MOSFET |
|
| 7 | IRL540NS |
INCHANGE |
N-Channel MOSFET |
|
| 8 | IRL540NSPBF |
International Rectifier |
HEXFET Power MOSFET |
|
| 9 | IRL540 |
International Rectifier |
Power MOSFET |
|
| 10 | IRL540 |
Fairchild Semiconductor |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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