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IRG4PH50S |
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| Part Number | IRG4PH50S |
| Manufacturer | IRF |
| Description | PD -91712A IRG4PH50S INSULATED GATE BIPOLAR TRANSISTOR Features • Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighte... |
| Features |
• Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-247AC package C Standard Speed IGBT VCES =1200V G E VCE(on) typ. = 1.47V @VGE = 15V, IC = 33A n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES ... |
| Document |
 IRG4PH50S Data Sheet
PDF 130.71KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PH50K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PH50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG4PH50KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PH50KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PH50S-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG4PH50SPbF |
IRF |
Standard Speed IGBT |
|
Desde 2024. D4U Semiconductor.
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