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IRG4PH50U |
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| Part Number | IRG4PH50U |
| Manufacturer | IRF |
| Description | PD - 91574B IRG4PH50U INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design prov... |
| Features |
• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode • New IGBT design provides tighter parameter distribution and higher efficiency than previous generations • Optimized for power conversion; SMPS, UPS and welding • Industry standard TO-247AC package C Ultra Fast Speed IGBT VCES = 1200V G E VCE(on) typ. = 2.78V @VGE = 15V, IC = 24A n-channel Benefits • Higher switching frequency capability than competitive IGBTs • Highest efficiency available • Much lower conduction losses than MOSFETs • More efficient than short circuit rated IG... |
| Document |
 IRG4PH50U Data Sheet
PDF 134.14KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRG4PH50K |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 2 | IRG4PH50KD |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 3 | IRG4PH50KDPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 4 | IRG4PH50KPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 5 | IRG4PH50S |
IRF |
INSULATED GATE BIPOLAR TRANSISTOR |
|
| 6 | IRG4PH50S-EPBF |
International Rectifier |
INSULATED GATE BIPOLAR TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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