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STP55NE06L |
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| Part Number | STP55NE06L |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely... |
| Features |
( • ) P t ot Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor o o V V V 28 20 220 35 0.23 2000 A A A W W/ C V V/ns o o o 55 39 220 130 0.86 7 -65 to 175 175 V ISO dV/dt T stg Tj Insulation W ithstand Voltage (DC) Peak Diode Recovery voltage slope Storage Temperature Max. O perating Junction Temperature C C 1/6 ( •) Pulse width limited by safe operating area ( 1) ISD ≤ 55 A, di/dt ≤ 300 A/µs, VDD... |
| Document |
 STP55NE06L Data Sheet
PDF 57.08KB |
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Desde 2024. D4U Semiconductor.
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