TC58DVG02A1FI0 Toshiba 1 Gbit (128M x *8its) CMOS NAND EPROM Datasheet. existencias, precio

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TC58DVG02A1FI0

Toshiba
TC58DVG02A1FI0
TC58DVG02A1FI0 TC58DVG02A1FI0
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Part Number TC58DVG02A1FI0
Manufacturer Toshiba (https://www.toshiba.com/)
Description The TC58DVG02A1 is a single 3.3 V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes × 32 pages × 8192 blocks. The device has ...
Features
• Organization Memory cell allay 528 × 256K × 8 Register 528 × 8 Page size 528 bytes Block size (16K + 512) bytes Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Multi Block Program, Multi Block Erase Mode control Serial input/output Command control



• Power supply VCC = 2.7 V to 3.6 V Program/Erase Cycles 1E5 cycle (with ECC) Access time Cell array to register 25 µs max Serial Read Cycle 50 ns min Operating current Read (50 ns cycle) 10 mA typ. Program (avg.) 10 mA typ. Erase (avg.) 10 mA typ. Standby 50 µA max. Package TSOPI48-P-1220-0.50 (Weight: 0.53g typ.)

• ...

Document Datasheet TC58DVG02A1FI0 Data Sheet
PDF 466.02KB

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